Industrial IDE DOM

Apro

Model HERMIT-A HERMIT-A
Flash Type SLC (PCN) SLC (PCN)
Interface IDE 40PIN Vertical IDE 44PIN Vertical
Status PCN_Change from Toshiba SLC NAND Flash 43nm to 24nm (16MB to 512MB) PCN_Change from Toshiba SLC NAND Flash 43nm to 24nm (16MB to 512MB)
Capacity 16MB~8GB 16MB~8GB
Compatibility ATAPI-6 and True IDE mode ATAPI-6 and True IDE mode
Master/Slave By switch By switch
Data transfer rate PIO 0~6, MWDMA 0~2, UDMA 0~4 PIO 0~6, MWDMA 0~2, UDMA 0~4
Sequential read (Max.) 39.5 MB/sec 39.5 MB/sec
Sequential write (Max.) 28 MB/sec 28 MB/sec
Operating temp. (STD/IND or WIDE) S : 0˚C~+70˚C/ I : -40˚C~+85˚C S : 0˚C~+70˚C/ I : -40˚C~+85˚C
Power requirement +5V ± 10% / + 3.3V ± 10% +5V ± 10% / + 3.3V ± 10%
Wear-leveling Static Static
TBW Up to 421.8 TBW at 8GB Up to 421.8 TBW at 8GB
Erase counts 60,000 60,000
Dimension (WxLxH,mm) 40 V : 60.20 x 27.79 x 6.40 40 H : 55.00 x 32.40 x 7.40 44 V : 50.25 x 27.27 x 5.80 44 H : 48.00 x 32.60 x 4.50 40 V : 60.20 x 27.79 x 6.40 40 H : 55.00 x 32.40 x 7.40 44 V : 50.25 x 27.27 x 5.80 44 H : 48.00 x 32.60 x 4.50

Silicon Power

Model IDE IFM-I20
Flash Technology SLC
Interface IDE 40PIN Vertical
Capacity 128MB ~ 1GB
Seq. Performance Read (max.) 50 MB/s
Seq. Performance Write (max.) 40 MB/s
Random 4K Read (IOPS max.) -
Random 4K Write (IOPS max.) -
Power Requirement DC 3.0V / 5.0V
Power Consumption (max.) 200 mA
Power Consumption (idle) 2 mA
Dimension (mm) 48.0 x 32.5 x 5.0
MTBF ≒2,000,000 hrs
Temperature
Operating 0°C ~ 70°C: Standard SP****BIFMAFOV11*T
Operating -40°C ~ 85°C: Wide SP****BIFMAFOW11*T
Key Features
Power Shield
S.M.A.R.T
Write Protection
SP SMART Utility